SSM6N15AFU,LF

MOSFET SM Sig N-CH MOS 0.1A 30V -20 VGSS

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R 2.67

R 1.51

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MOSFETs SM Sig N-CH MOS 0.1A 30V -20 VGSS
Lead Time: 240 Days

Products specifications

Rds On - Drain-Source Resistance	3.6 Ohms
Vds - Drain-Source Breakdown Voltage	30 V
Configuration	Dual
Technology	Si
Vgs - Gate-Source Voltage	20 V
Number of Channels	2 Channel
Id - Continuous Drain Current	100 mA
Transistor Polarity	N-Channel
Packaging	Cut Tape, MouseReel, Reel
Pd - Power Dissipation	300 mW

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Products specifications

Rds On - Drain-Source Resistance	3.6 Ohms
Vds - Drain-Source Breakdown Voltage	30 V
Configuration	Dual
Technology	Si
Vgs - Gate-Source Voltage	20 V
Number of Channels	2 Channel
Id - Continuous Drain Current	100 mA
Transistor Polarity	N-Channel
Packaging	Cut Tape, MouseReel, Reel
Pd - Power Dissipation	300 mW