SSM6L61NU,LF

MOSFET Small-signal MOSFET 2 in 1 Nch+Pch ID:4A

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MOSFETs Small-signal MOSFET 2 in 1 Nch+Pch ID:4A
Lead Time: 45 Days

Products specifications

Technology	Si
Pd - Power Dissipation	2 W
Id - Continuous Drain Current	4 A
Channel Mode	Enhancement
Packaging	Cut Tape, MouseReel, Reel
Vgs - Gate-Source Voltage	8 V, 12 V
Qg - Gate Charge	3.6 nC, 6.74 nC
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	20 V
Transistor Polarity	N-Channel, P-Channel
Number of Channels	2 Channel
Vgs th - Gate-Source Threshold Voltage	400 mV, 500 mV
Minimum Operating Temperature	-
Rds On - Drain-Source Resistance	108 mOhms, 157 mOhms
Configuration	Dual

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Products specifications

Technology	Si
Pd - Power Dissipation	2 W
Id - Continuous Drain Current	4 A
Channel Mode	Enhancement
Packaging	Cut Tape, MouseReel, Reel
Vgs - Gate-Source Voltage	8 V, 12 V
Qg - Gate Charge	3.6 nC, 6.74 nC
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	20 V
Transistor Polarity	N-Channel, P-Channel
Number of Channels	2 Channel
Vgs th - Gate-Source Threshold Voltage	400 mV, 500 mV
Minimum Operating Temperature	-
Rds On - Drain-Source Resistance	108 mOhms, 157 mOhms
Configuration	Dual