SSM6L40TU(TE85L,F)

MOSFET N-Ch FET 30V 1.6A 1V 500mW

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MOSFETs N-Ch FET 30V 1.6A 1V 500mW

Products specifications

Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	1.6 A, 1.4 A
Configuration	Dual
Rds On - Drain-Source Resistance	122 mOhms
Transistor Polarity	N-Channel, P-Channel
Number of Channels	2 Channel
Packaging	Cut Tape, MouseReel, Reel
Technology	Si

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Products specifications

Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	1.6 A, 1.4 A
Configuration	Dual
Rds On - Drain-Source Resistance	122 mOhms
Transistor Polarity	N-Channel, P-Channel
Number of Channels	2 Channel
Packaging	Cut Tape, MouseReel, Reel
Technology	Si