MOSFETs LowON Res MOSFET ID=1.6A VDSS=30V
Lead Time: 0 Days
Products specifications
Vgs th - Gate-Source Threshold Voltage | 1 V, 2 V |
Packaging | Cut Tape, MouseReel, Reel |
Transistor Polarity | N-Channel, P-Channel |
Vds - Drain-Source Breakdown Voltage | 30 V |
Qg - Gate Charge | 5.1 nC, 2.9 nC |
Technology | Si |
Maximum Operating Temperature | + 150 C |
Rds On - Drain-Source Resistance | 122 mOhms, 226 mOhms |
Number of Channels | 2 Channel |
Vgs - Gate-Source Voltage | 20 V |
Pd - Power Dissipation | 500 mW |
Id - Continuous Drain Current | 1.6 A, 1.4 A |
Minimum Operating Temperature | - 55 C |
Channel Mode | Enhancement |
Configuration | Dual |