MOSFETs Small-signal MOSFET 2-in-1
Lead Time: 112 Days
Products specifications
Channel Mode | Enhancement |
Id - Continuous Drain Current | 500 mA, 330 mA |
Configuration | Dual |
Transistor Polarity | N-Channel, P-Channel |
Vgs - Gate-Source Voltage | 10 V, 8 V |
Technology | Si |
Rds On - Drain-Source Resistance | 460 mOhms, 950 mOhms |
Packaging | Cut Tape, MouseReel, Reel |
Number of Channels | 2 Channel |
Qg - Gate Charge | 1.23 nC, 1.2 nC |
Pd - Power Dissipation | 150 mW |
Vgs th - Gate-Source Threshold Voltage | 350 mV, 1 V |
Vds - Drain-Source Breakdown Voltage | 20 V |
Maximum Operating Temperature | + 150 C |