SSM6L35FU(TE85L,F)

MOSFET N-Ch Sm Sig FET 0.1A -0.1A 20V 2-in1

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R 8.24

R 5.12

R 3.26

R 2.69

R 2.48

R 1.86

R 1.78

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MOSFETs N-Ch Sm Sig FET 0.1A -0.1A 20V 2-in1
Lead Time: 132 Days

Products specifications

Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	180 mA
Technology	Si
Pd - Power Dissipation	200 mW
Packaging	Cut Tape, MouseReel, Reel
Number of Channels	2 Channel
Rds On - Drain-Source Resistance	11 Ohms
Vgs th - Gate-Source Threshold Voltage	1 V
Configuration	Dual
Transistor Polarity	N-Channel, P-Channel

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Products specifications

Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	180 mA
Technology	Si
Pd - Power Dissipation	200 mW
Packaging	Cut Tape, MouseReel, Reel
Number of Channels	2 Channel
Rds On - Drain-Source Resistance	11 Ohms
Vgs th - Gate-Source Threshold Voltage	1 V
Configuration	Dual
Transistor Polarity	N-Channel, P-Channel