SSM6L14FE(TE85L,F)

MOSFET LowON Res MOSFET ID=0.8A VDSS=20V

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MOSFETs LowON Res MOSFET ID=0.8A VDSS=20V
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Products specifications

Rds On - Drain-Source Resistance	240 mOhms, 300 mOhms
Number of Channels	2 Channel
Configuration	Dual
Qg - Gate Charge	2 nC, 1.76 nC
Technology	Si
Transistor Polarity	N-Channel, P-Channel
Vgs - Gate-Source Voltage	10 V, 8 V
Vgs th - Gate-Source Threshold Voltage	350 mV, 1 V
Packaging	Cut Tape, Reel
Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	80 mA, 720 mA
Channel Mode	Enhancement
Vds - Drain-Source Breakdown Voltage	20 V
Pd - Power Dissipation	150 mW

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Products specifications

Rds On - Drain-Source Resistance	240 mOhms, 300 mOhms
Number of Channels	2 Channel
Configuration	Dual
Qg - Gate Charge	2 nC, 1.76 nC
Technology	Si
Transistor Polarity	N-Channel, P-Channel
Vgs - Gate-Source Voltage	10 V, 8 V
Vgs th - Gate-Source Threshold Voltage	350 mV, 1 V
Packaging	Cut Tape, Reel
Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	80 mA, 720 mA
Channel Mode	Enhancement
Vds - Drain-Source Breakdown Voltage	20 V
Pd - Power Dissipation	150 mW