SSM6L12TU,LF

MOSFET LowON Res MOSFET ID=-0.5A VDSS=-30V

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MOSFETs LowON Res MOSFET ID=-0.5A VDSS=-30V
Lead Time: 182 Days

Products specifications

Vgs th - Gate-Source Threshold Voltage	500 mV, 1.1 V
Technology	Si
Channel Mode	Enhancement
Rds On - Drain-Source Resistance	120 mOhms, 210 mOhms
Vds - Drain-Source Breakdown Voltage	30 V, 20 V
Pd - Power Dissipation	500 mW
Packaging	Cut Tape, MouseReel, Reel
Vgs - Gate-Source Voltage	12 V
Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	500 mA
Transistor Polarity	N-Channel, P-Channel
Number of Channels	2 Channel
Configuration	Dual

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Products specifications

Vgs th - Gate-Source Threshold Voltage	500 mV, 1.1 V
Technology	Si
Channel Mode	Enhancement
Rds On - Drain-Source Resistance	120 mOhms, 210 mOhms
Vds - Drain-Source Breakdown Voltage	30 V, 20 V
Pd - Power Dissipation	500 mW
Packaging	Cut Tape, MouseReel, Reel
Vgs - Gate-Source Voltage	12 V
Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	500 mA
Transistor Polarity	N-Channel, P-Channel
Number of Channels	2 Channel
Configuration	Dual