SSM6L09FUTE85LF

MOSFET N-Ch P-Ch Sg FET 0.4A -0.2A 30V -30V

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MOSFETs N-Ch P-Ch Sg FET 0.4A -0.2A 30V -30V
Lead Time: 266 Days

Products specifications

Configuration	Dual
Rds On - Drain-Source Resistance	4 Ohms
Pd - Power Dissipation	300 mW
Number of Channels	2 Channel
Packaging	Cut Tape, MouseReel, Reel
Technology	Si
Vds - Drain-Source Breakdown Voltage	30 V
Vgs th - Gate-Source Threshold Voltage	1.8 V
Id - Continuous Drain Current	400 mA
Transistor Polarity	N-Channel, P-Channel

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Products specifications

Configuration	Dual
Rds On - Drain-Source Resistance	4 Ohms
Pd - Power Dissipation	300 mW
Number of Channels	2 Channel
Packaging	Cut Tape, MouseReel, Reel
Technology	Si
Vds - Drain-Source Breakdown Voltage	30 V
Vgs th - Gate-Source Threshold Voltage	1.8 V
Id - Continuous Drain Current	400 mA
Transistor Polarity	N-Channel, P-Channel