MOSFETs Small Low ON Resistane MOSFETs
Lead Time: 70 Days
Products specifications
Vgs th - Gate-Source Threshold Voltage | 1.4 V |
Rds On - Drain-Source Resistance | 8.9 mOhms |
Id - Continuous Drain Current | 12 A |
Channel Mode | Enhancement |
Qg - Gate Charge | 7.5 nC |
Configuration | Single |
Transistor Polarity | N-Channel |
Maximum Operating Temperature | + 150 C |
Vds - Drain-Source Breakdown Voltage | 40 V |
Technology | Si |
Number of Channels | 1 Channel |
Vgs - Gate-Source Voltage | 20 V |
Pd - Power Dissipation | 1.25 W |
Packaging | Cut Tape, MouseReel, Reel |