MOSFETs Small Signal MOSFET
Lead Time: 91 Days
Products specifications
Vgs th - Gate-Source Threshold Voltage | 1.3 V |
Rds On - Drain-Source Resistance | 26 mOhms |
Id - Continuous Drain Current | 9 A |
Pd - Power Dissipation | 2.5 W |
Vgs - Gate-Source Voltage | 20 V |
Configuration | Single |
Technology | Si |
Qg - Gate Charge | 4.8 nC |
Number of Channels | 1 Channel |
Packaging | Cut Tape, MouseReel, Reel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 30 V |
Channel Mode | Enhancement |
Maximum Operating Temperature | + 150 C |