SSM6K361NU,LF

MOSFET LowON Res MOSFET ID=3.5A VDSS=100V

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MOSFETs LowON Res MOSFET ID=3.5A VDSS=100V
Lead Time: 112 Days

Products specifications

Qg - Gate Charge	3.2 nC
Vgs th - Gate-Source Threshold Voltage	1.5 V
Channel Mode	Enhancement
Pd - Power Dissipation	1.25 W
Configuration	Single
Vgs - Gate-Source Voltage	20 V
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	51 mOhms
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	100 V
Packaging	Cut Tape, MouseReel, Reel
Minimum Operating Temperature	-
Technology	Si
Id - Continuous Drain Current	3.5 A

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Products specifications

Qg - Gate Charge	3.2 nC
Vgs th - Gate-Source Threshold Voltage	1.5 V
Channel Mode	Enhancement
Pd - Power Dissipation	1.25 W
Configuration	Single
Vgs - Gate-Source Voltage	20 V
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	51 mOhms
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	100 V
Packaging	Cut Tape, MouseReel, Reel
Minimum Operating Temperature	-
Technology	Si
Id - Continuous Drain Current	3.5 A