SSM6J50TU,LF

MOSFET LowON Res MOSFET ID=-2.5A VDSS=-20V

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MOSFETs LowON Res MOSFET ID=-2.5A VDSS=-20V
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Products specifications

Vgs - Gate-Source Voltage	10 V
Packaging	Cut Tape, Reel
Technology	Si
Id - Continuous Drain Current	2.5 A
Vgs th - Gate-Source Threshold Voltage	1.2 V
Pd - Power Dissipation	500 mW
Channel Mode	Enhancement
Transistor Polarity	P-Channel
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	20 V
Configuration	Single
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	64 mOhms

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Products specifications

Vgs - Gate-Source Voltage	10 V
Packaging	Cut Tape, Reel
Technology	Si
Id - Continuous Drain Current	2.5 A
Vgs th - Gate-Source Threshold Voltage	1.2 V
Pd - Power Dissipation	500 mW
Channel Mode	Enhancement
Transistor Polarity	P-Channel
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	20 V
Configuration	Single
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	64 mOhms