SSM6J507NU,LF

MOSFET Small Signal MOSFET V=30V, I-10A

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MOSFETs Small Signal MOSFET V=30V, I-10A
Lead Time: 112 Days

Products specifications

Channel Mode	Enhancement
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	20 mOhms
Packaging	Cut Tape, MouseReel, Reel
Pd - Power Dissipation	2.5 W
Vds - Drain-Source Breakdown Voltage	30 V
Technology	Si
Qg - Gate Charge	13.6 nC
Configuration	Single
Vgs - Gate-Source Voltage	10 V
Vgs th - Gate-Source Threshold Voltage	1 V
Id - Continuous Drain Current	10 A
Maximum Operating Temperature	+ 150 C
Transistor Polarity	P-Channel

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Products specifications

Channel Mode	Enhancement
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	20 mOhms
Packaging	Cut Tape, MouseReel, Reel
Pd - Power Dissipation	2.5 W
Vds - Drain-Source Breakdown Voltage	30 V
Technology	Si
Qg - Gate Charge	13.6 nC
Configuration	Single
Vgs - Gate-Source Voltage	10 V
Vgs th - Gate-Source Threshold Voltage	1 V
Id - Continuous Drain Current	10 A
Maximum Operating Temperature	+ 150 C
Transistor Polarity	P-Channel