MOSFETs P-Ch U-MOS VI FET ID -12A -12V 1200pF
Products specifications
Transistor Polarity | P-Channel |
Maximum Operating Temperature | + 150 C |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Minimum Operating Temperature | - 55 C |
Qg - Gate Charge | 37.6 nC |
Pd - Power Dissipation | 1.25 W |
Id - Continuous Drain Current | 12 A |
Vds - Drain-Source Breakdown Voltage | 12 V |
Technology | Si |
Packaging | Cut Tape, MouseReel, Reel |
Rds On - Drain-Source Resistance | 61 mOhms |
Vgs - Gate-Source Voltage | 6 V |
Number of Channels | 1 Channel |
Configuration | Single |