SSM6J414TU,LF

MOSFET P-Ch U-MOS VI FET ID -6A -20V 1650pF

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MOSFETs P-Ch U-MOS VI FET ID -6A -20V 1650pF
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Products specifications

Pd - Power Dissipation	1 W
Transistor Polarity	P-Channel
Id - Continuous Drain Current	6 A
Vgs - Gate-Source Voltage	8 V
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	20 V
Rds On - Drain-Source Resistance	54 mOhms
Vgs th - Gate-Source Threshold Voltage	1 V
Configuration	Single
Maximum Operating Temperature	+ 150 C
Number of Channels	1 Channel
Technology	Si
Packaging	Cut Tape, MouseReel, Reel
Qg - Gate Charge	23.1 nC

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Products specifications

Pd - Power Dissipation	1 W
Transistor Polarity	P-Channel
Id - Continuous Drain Current	6 A
Vgs - Gate-Source Voltage	8 V
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	20 V
Rds On - Drain-Source Resistance	54 mOhms
Vgs th - Gate-Source Threshold Voltage	1 V
Configuration	Single
Maximum Operating Temperature	+ 150 C
Number of Channels	1 Channel
Technology	Si
Packaging	Cut Tape, MouseReel, Reel
Qg - Gate Charge	23.1 nC