SSM6J216FE,LF

MOSFET LowON Res MOSFET ID=--4.8A VDSS=-12V

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MOSFETs LowON Res MOSFET ID=--4.8A VDSS=-12V
Lead Time: 153 Days

Products specifications

Vgs th - Gate-Source Threshold Voltage	1 V
Channel Mode	Enhancement
Transistor Polarity	P-Channel
Technology	Si
Vds - Drain-Source Breakdown Voltage	12 V
Packaging	Cut Tape, MouseReel, Reel
Maximum Operating Temperature	+ 150 C
Configuration	Single
Vgs - Gate-Source Voltage	8 V
Pd - Power Dissipation	700 mW
Rds On - Drain-Source Resistance	26 mOhms
Id - Continuous Drain Current	4.8 A
Minimum Operating Temperature	-
Qg - Gate Charge	12.7 nC
Number of Channels	1 Channel

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Products specifications

Vgs th - Gate-Source Threshold Voltage	1 V
Channel Mode	Enhancement
Transistor Polarity	P-Channel
Technology	Si
Vds - Drain-Source Breakdown Voltage	12 V
Packaging	Cut Tape, MouseReel, Reel
Maximum Operating Temperature	+ 150 C
Configuration	Single
Vgs - Gate-Source Voltage	8 V
Pd - Power Dissipation	700 mW
Rds On - Drain-Source Resistance	26 mOhms
Id - Continuous Drain Current	4.8 A
Minimum Operating Temperature	-
Qg - Gate Charge	12.7 nC
Number of Channels	1 Channel