SSM6J214FE(TE85L,F

MOSFET LowON Res MOSFET ID=-3.6A VDSS=-30V

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MOSFETs LowON Res MOSFET ID=-3.6A VDSS=-30V
Lead Time: 15 Days

Products specifications

Qg - Gate Charge	7.9 nC
Vds - Drain-Source Breakdown Voltage	30 V
Technology	Si
Pd - Power Dissipation	700 mW
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	50 mOhms
Packaging	Cut Tape, Reel
Transistor Polarity	P-Channel
Maximum Operating Temperature	+ 150 C
Vgs - Gate-Source Voltage	12 V
Vgs th - Gate-Source Threshold Voltage	1.2 V
Channel Mode	Enhancement
Configuration	Single
Id - Continuous Drain Current	3.6 A

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Products specifications

Qg - Gate Charge	7.9 nC
Vds - Drain-Source Breakdown Voltage	30 V
Technology	Si
Pd - Power Dissipation	700 mW
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	50 mOhms
Packaging	Cut Tape, Reel
Transistor Polarity	P-Channel
Maximum Operating Temperature	+ 150 C
Vgs - Gate-Source Voltage	12 V
Vgs th - Gate-Source Threshold Voltage	1.2 V
Channel Mode	Enhancement
Configuration	Single
Id - Continuous Drain Current	3.6 A