SSM6H19NU,LF

MOSFET UDFN6 S-MOS TRSTR Pd: 0.5W F: 1MHz

Availability: 4607 in stock

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R 6.95

R 4.50

R 3.07

R 2.72

R 2.34

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MOSFETs UDFN6 S-MOS TRSTR Pd: 0.5W F: 1MHz
Lead Time: 20 Days

Products specifications

Id - Continuous Drain Current	2 A
Technology	Si
Vgs - Gate-Source Voltage	3.6 V
Rds On - Drain-Source Resistance	160 mOhms
Pd - Power Dissipation	1 W
Qg - Gate Charge	1 nC
Configuration	Single
Transistor Polarity	N-Channel, SBD
Packaging	Cut Tape, MouseReel, Reel
Vds - Drain-Source Breakdown Voltage	40 V
Number of Channels	1 Channel

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Products specifications

Id - Continuous Drain Current	2 A
Technology	Si
Vgs - Gate-Source Voltage	3.6 V
Rds On - Drain-Source Resistance	160 mOhms
Pd - Power Dissipation	1 W
Qg - Gate Charge	1 nC
Configuration	Single
Transistor Polarity	N-Channel, SBD
Packaging	Cut Tape, MouseReel, Reel
Vds - Drain-Source Breakdown Voltage	40 V
Number of Channels	1 Channel