SSM5P15FU,LF

MOSFET LowON Res MOSFET ID=-0.1A VDSS=-30V

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MOSFETs LowON Res MOSFET ID=-0.1A VDSS=-30V
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Products specifications

Number of Channels	2 Channel
Vds - Drain-Source Breakdown Voltage	30 V
Technology	Si
Rds On - Drain-Source Resistance	12 Ohms
Id - Continuous Drain Current	100 mA
Vgs th - Gate-Source Threshold Voltage	1.7 V
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C
Packaging	Cut Tape, Reel
Transistor Polarity	P-Channel
Vgs - Gate-Source Voltage	20 V
Configuration	Dual
Pd - Power Dissipation	200 mW

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Products specifications

Number of Channels	2 Channel
Vds - Drain-Source Breakdown Voltage	30 V
Technology	Si
Rds On - Drain-Source Resistance	12 Ohms
Id - Continuous Drain Current	100 mA
Vgs th - Gate-Source Threshold Voltage	1.7 V
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C
Packaging	Cut Tape, Reel
Transistor Polarity	P-Channel
Vgs - Gate-Source Voltage	20 V
Configuration	Dual
Pd - Power Dissipation	200 mW