SSM5N16FUTE85LF

MOSFET N-Ch Sm Sig FET 0.1A 20V 2-in-1

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R 9.91

R 6.46

R 3.53

R 3.04

R 2.45

R 2.13

R 1.72

R 1.70

R 1.62

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MOSFETs N-Ch Sm Sig FET 0.1A 20V 2-in-1
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Products specifications

Vgs - Gate-Source Voltage	10 V
Packaging	Cut Tape, MouseReel, Reel
Transistor Polarity	N-Channel
Vgs th - Gate-Source Threshold Voltage	600 mV
Configuration	Dual
Id - Continuous Drain Current	100 mA
Channel Mode	Enhancement
Technology	Si
Number of Channels	2 Channel
Vds - Drain-Source Breakdown Voltage	20 V
Pd - Power Dissipation	200 mW
Maximum Operating Temperature	+ 150 C
Rds On - Drain-Source Resistance	3 Ohms

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Products specifications

Vgs - Gate-Source Voltage	10 V
Packaging	Cut Tape, MouseReel, Reel
Transistor Polarity	N-Channel
Vgs th - Gate-Source Threshold Voltage	600 mV
Configuration	Dual
Id - Continuous Drain Current	100 mA
Channel Mode	Enhancement
Technology	Si
Number of Channels	2 Channel
Vds - Drain-Source Breakdown Voltage	20 V
Pd - Power Dissipation	200 mW
Maximum Operating Temperature	+ 150 C
Rds On - Drain-Source Resistance	3 Ohms