SSM5N15FU(TE85L,F)

MOSFET N-Ch Sm Sig FET 0.1A 30V 2-in-1

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R 4.36

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MOSFETs N-Ch Sm Sig FET 0.1A 30V 2-in-1

Products specifications

Transistor Polarity	N-Channel
Id - Continuous Drain Current	100 mA
Rds On - Drain-Source Resistance	4 Ohms
Packaging	Cut Tape, MouseReel, Reel
Vds - Drain-Source Breakdown Voltage	30 V
Number of Channels	2 Channel
Configuration	Dual
Pd - Power Dissipation	200 mW
Vgs th - Gate-Source Threshold Voltage	1.5 V
Technology	Si

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Products specifications

Transistor Polarity	N-Channel
Id - Continuous Drain Current	100 mA
Rds On - Drain-Source Resistance	4 Ohms
Packaging	Cut Tape, MouseReel, Reel
Vds - Drain-Source Breakdown Voltage	30 V
Number of Channels	2 Channel
Configuration	Dual
Pd - Power Dissipation	200 mW
Vgs th - Gate-Source Threshold Voltage	1.5 V
Technology	Si