SSM5N15FU,LF

MOSFET LowON Res MOSFET ID=0.1A VDSS=30V

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MOSFETs LowON Res MOSFET ID=0.1A VDSS=30V
Lead Time: 44 Days

Products specifications

Vds - Drain-Source Breakdown Voltage	30 V
Configuration	Dual
Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	100 mA
Pd - Power Dissipation	200 mW
Number of Channels	2 Channel
Channel Mode	Enhancement
Vgs - Gate-Source Voltage	20 V
Rds On - Drain-Source Resistance	2.2 Ohms, 2.2 Ohms
Transistor Polarity	N-Channel
Vgs th - Gate-Source Threshold Voltage	800 mV
Technology	Si
Packaging	Cut Tape, MouseReel, Reel

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Products specifications

Vds - Drain-Source Breakdown Voltage	30 V
Configuration	Dual
Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	100 mA
Pd - Power Dissipation	200 mW
Number of Channels	2 Channel
Channel Mode	Enhancement
Vgs - Gate-Source Voltage	20 V
Rds On - Drain-Source Resistance	2.2 Ohms, 2.2 Ohms
Transistor Polarity	N-Channel
Vgs th - Gate-Source Threshold Voltage	800 mV
Technology	Si
Packaging	Cut Tape, MouseReel, Reel