SSM3K62TU,LF

MOSFET LowON Res MOSFET ID=.8A VDSS=20V

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MOSFETs LowON Res MOSFET ID=.8A VDSS=20V
Lead Time: 38 Days

Products specifications

Qg - Gate Charge	2 nC
Transistor Polarity	N-Channel
Technology	Si
Rds On - Drain-Source Resistance	43 mOhms
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	400 mV
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	20 V
Configuration	Single
Id - Continuous Drain Current	800 mA
Packaging	Cut Tape, MouseReel, Reel
Vgs - Gate-Source Voltage	8 V

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Products specifications

Qg - Gate Charge	2 nC
Transistor Polarity	N-Channel
Technology	Si
Rds On - Drain-Source Resistance	43 mOhms
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	400 mV
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	20 V
Configuration	Single
Id - Continuous Drain Current	800 mA
Packaging	Cut Tape, MouseReel, Reel
Vgs - Gate-Source Voltage	8 V