SSM3K56FS,LF

MOSFET N-Ch U-MOSVI FET ID 0.8A 20VDSS 55pF

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MOSFETs N-Ch U-MOSVI FET ID 0.8A 20VDSS 55pF
Lead Time: 26 Days

Products specifications

Configuration	Single
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	20 V
Qg - Gate Charge	1 nC
Vgs - Gate-Source Voltage	4.5 V
Vgs th - Gate-Source Threshold Voltage	400 mV
Rds On - Drain-Source Resistance	235 mOhms
Pd - Power Dissipation	500 mW
Technology	Si
Packaging	Cut Tape, MouseReel, Reel
Id - Continuous Drain Current	8 A
Channel Mode	Enhancement
Transistor Polarity	N-Channel
Number of Channels	1 Channel

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Products specifications

Configuration	Single
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	20 V
Qg - Gate Charge	1 nC
Vgs - Gate-Source Voltage	4.5 V
Vgs th - Gate-Source Threshold Voltage	400 mV
Rds On - Drain-Source Resistance	235 mOhms
Pd - Power Dissipation	500 mW
Technology	Si
Packaging	Cut Tape, MouseReel, Reel
Id - Continuous Drain Current	8 A
Channel Mode	Enhancement
Transistor Polarity	N-Channel
Number of Channels	1 Channel