SSM3K56CT,L3F

MOSFET Small Low ON Resistane MOSFETs

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MOSFETs Small Low ON Resistane MOSFETs
Lead Time: 198 Days

Products specifications

Maximum Operating Temperature	+ 150 C
Transistor Polarity	N-Channel
Qg - Gate Charge	1 nC
Technology	Si
Channel Mode	Enhancement
Vds - Drain-Source Breakdown Voltage	20 V
Number of Channels	1 Channel
Id - Continuous Drain Current	800 mA
Configuration	Single
Vgs th - Gate-Source Threshold Voltage	400 mV
Rds On - Drain-Source Resistance	186 mOhms
Packaging	Cut Tape, MouseReel, Reel
Vgs - Gate-Source Voltage	8 V

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Products specifications

Maximum Operating Temperature	+ 150 C
Transistor Polarity	N-Channel
Qg - Gate Charge	1 nC
Technology	Si
Channel Mode	Enhancement
Vds - Drain-Source Breakdown Voltage	20 V
Number of Channels	1 Channel
Id - Continuous Drain Current	800 mA
Configuration	Single
Vgs th - Gate-Source Threshold Voltage	400 mV
Rds On - Drain-Source Resistance	186 mOhms
Packaging	Cut Tape, MouseReel, Reel
Vgs - Gate-Source Voltage	8 V