MOSFETs LowON Res MOSFET ID=.1A VDSS=30V
Lead Time: 0 Days
Products specifications
Rds On - Drain-Source Resistance | 2.2 Ohms |
Maximum Operating Temperature | + 150 C |
Vds - Drain-Source Breakdown Voltage | 30 V |
Vgs th - Gate-Source Threshold Voltage | 800 mV |
Pd - Power Dissipation | 150 mW |
Technology | Si |
Transistor Polarity | N-Channel |
Vgs - Gate-Source Voltage | 20 V |
Channel Mode | Enhancement |
Number of Channels | 1 Channel |
Id - Continuous Drain Current | 100 mA |
Configuration | Single |
Packaging | Cut Tape, MouseReel, Reel |