MOSFETs Small Low ON Resistane MOSFETs
Lead Time: 68 Days
Products specifications
Pd - Power Dissipation | 100 mW |
Number of Channels | 1 Channel |
Configuration | Single |
Transistor Polarity | N-Channel |
Channel Mode | Enhancement |
Vgs - Gate-Source Voltage | 4.5 V |
Technology | Si |
Packaging | Cut Tape, Reel |
Vgs th - Gate-Source Threshold Voltage | 350 mV |
Id - Continuous Drain Current | 200 mA |
Vds - Drain-Source Breakdown Voltage | 20 V |
Rds On - Drain-Source Resistance | 2.2 Ohms |
Maximum Operating Temperature | + 150 C |