SSM3K376R,LF

MOSFET LowON Res MOSFET ID=4A VDSS=30V

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MOSFETs LowON Res MOSFET ID=4A VDSS=30V
Lead Time: 19 Days

Products specifications

Number of Channels	1 Channel
Id - Continuous Drain Current	4 A
Qg - Gate Charge	2.2 nC
Vgs th - Gate-Source Threshold Voltage	400 mV
Vgs - Gate-Source Voltage	12 V, - 8 V
Packaging	Cut Tape, Reel
Pd - Power Dissipation	1 W
Technology	Si
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	56 mOhms
Vds - Drain-Source Breakdown Voltage	30 V
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Configuration	Single

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Products specifications

Number of Channels	1 Channel
Id - Continuous Drain Current	4 A
Qg - Gate Charge	2.2 nC
Vgs th - Gate-Source Threshold Voltage	400 mV
Vgs - Gate-Source Voltage	12 V, - 8 V
Packaging	Cut Tape, Reel
Pd - Power Dissipation	1 W
Technology	Si
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	56 mOhms
Vds - Drain-Source Breakdown Voltage	30 V
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Configuration	Single