MOSFETs LowON Res MOSFET ID=3.5A VDSS=100V
Lead Time: 87 Days
Products specifications
Channel Mode | Enhancement |
Number of Channels | 1 Channel |
Vgs th - Gate-Source Threshold Voltage | 1.5 V |
Id - Continuous Drain Current | 3.5 A |
Transistor Polarity | N-Channel |
Maximum Operating Temperature | + 175 C |
Configuration | Single |
Vgs - Gate-Source Voltage | 20 V |
Rds On - Drain-Source Resistance | 51 mOhms |
Technology | Si |
Vds - Drain-Source Breakdown Voltage | 100 V |
Pd - Power Dissipation | 1 W |
Packaging | Cut Tape, MouseReel, Reel |
Qg - Gate Charge | 3.2 nC |