MOSFET LowON Res MOSFET ID=.25A VDSS=20V
Products specifications
Configuration | Single |
Vgs th - Gate-Source Threshold Voltage | 350 mV |
Channel Mode | Enhancement |
Qg - Gate Charge | 340 pC |
Maximum Operating Temperature | + 150 C |
Rds On - Drain-Source Resistance | 750 mOhms |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Id - Continuous Drain Current | 250 mA |
Minimum Operating Temperature | - |
Technology | Si |
Pd - Power Dissipation | 500 mW |
Packaging | Cut Tape, MouseReel, Reel |
Vgs - Gate-Source Voltage | 10 V |
Vds - Drain-Source Breakdown Voltage | 20 V |