MOSFET LowON Res MOSFET ID=3A VDSS=20V
Products specifications
Id - Continuous Drain Current | 3 A |
Configuration | Single |
Number of Channels | 1 Channel |
Packaging | Cut Tape, MouseReel, Reel |
Vgs th - Gate-Source Threshold Voltage | 400 mV |
Transistor Polarity | N-Channel |
Rds On - Drain-Source Resistance | 51 mOhms |
Technology | Si |
Qg - Gate Charge | 2 nC |
Minimum Operating Temperature | - |
Vds - Drain-Source Breakdown Voltage | 20 V |
Vgs - Gate-Source Voltage | 8 V |
Maximum Operating Temperature | + 150 C |
Channel Mode | Enhancement |
Pd - Power Dissipation | 2 W |