MOSFET LowON Res MOSFET ID=6A VDSS=60V
Products specifications
Rds On - Drain-Source Resistance | 28 mOhms |
Qg - Gate Charge | 9.3 nC |
Vgs th - Gate-Source Threshold Voltage | 1.5 V |
Configuration | Single |
Technology | Si |
Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 6 A |
Vgs - Gate-Source Voltage | 20 V |
Packaging | Cut Tape, MouseReel, Reel |
Channel Mode | Enhancement |
Pd - Power Dissipation | 1 W |
Maximum Operating Temperature | + 175 C |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |