MOSFET U-MOSVIII-H 60V 6A 9.3nC MOSFET
Products specifications
Pd - Power Dissipation | 1.2 W |
Channel Mode | Enhancement |
Rds On - Drain-Source Resistance | 69 mOhms |
Id - Continuous Drain Current | 6 A |
Transistor Polarity | N-Channel |
Maximum Operating Temperature | + 175 C |
Packaging | Cut Tape, MouseReel, Reel |
Qg - Gate Charge | 9.3 nC |
Technology | Si |
Vgs - Gate-Source Voltage | 20 V |
Vds - Drain-Source Breakdown Voltage | 60 V |
Vgs th - Gate-Source Threshold Voltage | 1.5 V |
Minimum Operating Temperature | - 55 C |
Number of Channels | 1 Channel |
Configuration | Single |