MOSFET Small Signal Mosfet
Products specifications
Rds On - Drain-Source Resistance | 95 mOhms |
Id - Continuous Drain Current | 3 A |
Maximum Operating Temperature | + 150 C |
Technology | Si |
Vgs - Gate-Source Voltage | 10 V |
Qg - Gate Charge | 1.7 nC |
Packaging | Cut Tape, Reel |
Vds - Drain-Source Breakdown Voltage | 30 V |
Vgs th - Gate-Source Threshold Voltage | 1.3 V |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Configuration | Single |
Pd - Power Dissipation | 2 W |
Channel Mode | Enhancement |