MOSFET N-Ch U-MOSVI FET ID 6A 30VDSS 340pF
Products specifications
Rds On - Drain-Source Resistance | 56 mOhms |
Transistor Polarity | N-Channel |
Technology | Si |
Configuration | Single |
Number of Channels | 1 Channel |
Pd - Power Dissipation | 1 W |
Vds - Drain-Source Breakdown Voltage | 30 V |
Packaging | Cut Tape, MouseReel, Reel |
Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Qg - Gate Charge | 2.7 nC |
Id - Continuous Drain Current | 6 A |
Vgs - Gate-Source Voltage | 20 V |