MOSFET SM Sig N-CH MOS 30V 6A 20V VGSS
Products specifications
Qg - Gate Charge | 3.4 nC |
Vgs th - Gate-Source Threshold Voltage | 1.3 V |
Technology | Si |
Configuration | Single |
Vgs - Gate-Source Voltage | 10 V |
Pd - Power Dissipation | 2 W |
Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 6 A |
Maximum Operating Temperature | + 150 C |
Packaging | Cut Tape, MouseReel, Reel |
Channel Mode | Enhancement |
Rds On - Drain-Source Resistance | 107 mOhms |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |