MOSFET SM Sig N-CH MOS 30V 3.5A 12V VGSS
Products specifications
Pd - Power Dissipation | 1 W |
Configuration | Single |
Rds On - Drain-Source Resistance | 126 mOhms |
Maximum Operating Temperature | + 150 C |
Vgs - Gate-Source Voltage | 4 V |
Vds - Drain-Source Breakdown Voltage | 30 V |
Qg - Gate Charge | 1.5 nC |
Technology | Si |
Id - Continuous Drain Current | 3.5 A |
Channel Mode | Enhancement |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Packaging | Cut Tape, MouseReel, Reel |
Vgs th - Gate-Source Threshold Voltage | 400 mV |