MOSFET N-Ch U-MOSVI FET ID 4A 30VDSS 200pF
Products specifications
Id - Continuous Drain Current | 4 A |
Qg - Gate Charge | 2.2 nC |
Transistor Polarity | N-Channel |
Vgs - Gate-Source Voltage | 4.5 V |
Channel Mode | Enhancement |
Rds On - Drain-Source Resistance | 56 mOhms |
Vgs th - Gate-Source Threshold Voltage | 400 mV |
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 30 V |
Maximum Operating Temperature | + 150 C |
Number of Channels | 1 Channel |
Packaging | Cut Tape, MouseReel, Reel |
Technology | Si |
Pd - Power Dissipation | 1 W |