MOSFET Small Signal Mosfet
Products specifications
Maximum Operating Temperature | + 150 C |
Vds - Drain-Source Breakdown Voltage | 60 V |
Technology | Si |
Vgs th - Gate-Source Threshold Voltage | 1.8 V |
Pd - Power Dissipation | 2 W |
Number of Channels | 1 Channel |
Vgs - Gate-Source Voltage | 10 V |
Qg - Gate Charge | 7 nC |
Packaging | Cut Tape, MouseReel, Reel |
Transistor Polarity | N-Channel |
Rds On - Drain-Source Resistance | 107 mOhms |
Id - Continuous Drain Current | 2.5 A |
Channel Mode | Enhancement |
Configuration | Single |