MOSFET LowON Res MOSFET ID=0.1A VDSS=50V
Products specifications
Vds - Drain-Source Breakdown Voltage | 50 V |
Pd - Power Dissipation | 150 mW |
Configuration | Single |
Maximum Operating Temperature | + 150 C |
Vgs - Gate-Source Voltage | 4 V |
Rds On - Drain-Source Resistance | 20 Ohms |
Packaging | Cut Tape, Reel |
Technology | Si |
Channel Mode | Enhancement |
Vgs th - Gate-Source Threshold Voltage | 900 mV |
Transistor Polarity | N-Channel |
Id - Continuous Drain Current | 100 mA |
Number of Channels | 1 Channel |