MOSFET LowON Res MOSFET ID=0.1A VDSS=20V
Products specifications
Pd - Power Dissipation | 100 mW |
Vgs - Gate-Source Voltage | 10 V |
Transistor Polarity | N-Channel |
Configuration | Single |
Maximum Operating Temperature | + 150 C |
Vds - Drain-Source Breakdown Voltage | 20 V |
Number of Channels | 1 Channel |
Vgs th - Gate-Source Threshold Voltage | 600 mV |
Rds On - Drain-Source Resistance | 3 Ohms |
Id - Continuous Drain Current | 100 mA |
Technology | Si |
Packaging | Cut Tape, Reel |
Channel Mode | Enhancement |