MOSFET Small-Signal MOSFET
Products specifications
Configuration | Single |
Vgs - Gate-Source Voltage | 4 V |
Vds - Drain-Source Breakdown Voltage | 30 V |
Channel Mode | Enhancement |
Pd - Power Dissipation | 150 mW |
Id - Continuous Drain Current | 100 mA |
Technology | Si |
Rds On - Drain-Source Resistance | 3.6 Ohms |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Packaging | Cut Tape, MouseReel, Reel |
Maximum Operating Temperature | + 150 C |
Vgs th - Gate-Source Threshold Voltage | 800 mV |