SSM3K15ACT(TPL3)

R 1.00

MOSFET SM Sig N-CH MOS 30V 0.1A 20V VGSS

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MOSFET SM Sig N-CH MOS 30V 0.1A 20V VGSS

Products specifications

Configuration	Single
Packaging	Cut Tape, MouseReel, Reel
Vgs - Gate-Source Voltage	20 V
Pd - Power Dissipation	100 mW
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	30 V
Rds On - Drain-Source Resistance	3.6 Ohms
Id - Continuous Drain Current	100 mA
Transistor Polarity	N-Channel
Technology	Si

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Products specifications

Configuration	Single
Packaging	Cut Tape, MouseReel, Reel
Vgs - Gate-Source Voltage	20 V
Pd - Power Dissipation	100 mW
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	30 V
Rds On - Drain-Source Resistance	3.6 Ohms
Id - Continuous Drain Current	100 mA
Transistor Polarity	N-Channel
Technology	Si