MOSFET UFM S-MOS Pd: 0.8W F: 1MHz
Products specifications
Configuration | Single |
Vgs - Gate-Source Voltage | 4 V |
Rds On - Drain-Source Resistance | 28 mOhms |
Id - Continuous Drain Current | 4.2 A |
Channel Mode | Enhancement |
Vgs th - Gate-Source Threshold Voltage | 350 mV |
Technology | Si |
Qg - Gate Charge | 13.6 nC |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Packaging | Cut Tape, MouseReel, Reel |
Pd - Power Dissipation | 800 mW |
Maximum Operating Temperature | + 150 C |
Vds - Drain-Source Breakdown Voltage | 20 V |