MOSFET Vds=20V Id=3.2A 3Pin
Products specifications
Vds - Drain-Source Breakdown Voltage | 20 V |
Pd - Power Dissipation | 800 mW |
Packaging | Reel |
Channel Mode | Enhancement |
Number of Channels | 1 Channel |
Rds On - Drain-Source Resistance | 75 mOhms |
Id - Continuous Drain Current | 3.2 A |
Transistor Polarity | N-Channel |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Vgs - Gate-Source Voltage | 10 V |
Configuration | Single |
Technology | Si |