MOSFET Small-signal FET 1.2A 20V 0.53Ohm
Products specifications
Packaging | Cut Tape, Reel |
Rds On - Drain-Source Resistance | 310 mOhms |
Id - Continuous Drain Current | 1.2 A |
Technology | Si |
Vgs th - Gate-Source Threshold Voltage | 1.1 V |
Vds - Drain-Source Breakdown Voltage | 20 V |
Configuration | Single |
Channel Mode | Enhancement |
Vgs - Gate-Source Voltage | 10 V |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 800 mW |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |