MOSFET P-CH VDSS:-12V VGSS:+/-10V ID:
Products specifications
Vds - Drain-Source Breakdown Voltage | - 12 V |
Pd - Power Dissipation | 500 mW |
Technology | Si |
Packaging | Cut Tape, MouseReel, Reel |
Rds On - Drain-Source Resistance | 370 mOhms |
Number of Channels | 1 Channel |
Id - Continuous Drain Current | - 1 A |
Maximum Operating Temperature | + 150 C |
Vgs - Gate-Source Voltage | - 4.5 V |
Channel Mode | Enhancement |
Vgs th - Gate-Source Threshold Voltage | - 0.3 V |
Configuration | Single |
Transistor Polarity | P-Channel |