MOSFET Small Signal MOSFET
Products specifications
Number of Channels | 1 Channel |
Channel Mode | Enhancement |
Rds On - Drain-Source Resistance | 390 mOhms |
Vgs th - Gate-Source Threshold Voltage | 300 mV |
Configuration | Single |
Vgs - Gate-Source Voltage | 4.5 V |
Qg - Gate Charge | 1.6 nC |
Maximum Operating Temperature | + 150 C |
Vds - Drain-Source Breakdown Voltage | 20 V |
Packaging | Cut Tape, MouseReel, Reel |
Transistor Polarity | P-Channel |
Technology | Si |
Pd - Power Dissipation | 800 mW |
Id - Continuous Drain Current | 800 mA |