3SK291(TE85L,F)

RF MOSFET Transistors N-Ch High Freq 30mA 0.15W 12.5V

SKU: 3SK291(TE85L,F)

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R 12.38

R 10.05

R 6.84

R 5.13

R 3.87

R 3.31

R 3.08

R 2.90

R 2.82

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RF MOSFET Transistors N-Ch High Freq 30mA 0.15W 12.5V

Products specifications

Manufacturer	Toshiba
Product Category	RF MOSFET Transistors
RoHS	Details
Mounting Style	SMD/SMT
Package/Case	SOT-24-4
Packaging	Cut Tape, MouseReel, Reel, Cut Tape, MouseReel, Reel
Configuration	Dual
Operating Frequency	800 MHz
Series	3SK291
Type	RF Small Signal MOSFET
Brand	Toshiba
Pd - Power Dissipation	150 mW
Factory Pack Quantity	3000
Subcategory	MOSFETs
Unit Weight	13 mg
Id - Continuous Drain Current	30 mA
Product Type	RF MOSFET Transistors
Gain	22.5 dB
Technology	Si
Vds - Drain-Source Breakdown Voltage	12.5 V
Transistor Polarity	N-Channel

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Products specifications

Manufacturer	Toshiba
Product Category	RF MOSFET Transistors
RoHS	Details
Mounting Style	SMD/SMT
Package/Case	SOT-24-4
Packaging	Cut Tape, MouseReel, Reel, Cut Tape, MouseReel, Reel
Configuration	Dual
Operating Frequency	800 MHz
Series	3SK291
Type	RF Small Signal MOSFET
Brand	Toshiba
Pd - Power Dissipation	150 mW
Factory Pack Quantity	3000
Subcategory	MOSFETs
Unit Weight	13 mg
Id - Continuous Drain Current	30 mA
Product Type	RF MOSFET Transistors
Gain	22.5 dB
Technology	Si
Vds - Drain-Source Breakdown Voltage	12.5 V
Transistor Polarity	N-Channel